e-MMC
- 东芝eMMC
e-MMC是指一系列具有ECC、耗损均衡和坏块管理等控制功能的NAND闪存(NAND)。e-MMC也提供符合JEDEC/MMCA版本 4.5/5.0/5.1的高速存储卡接口,从而消除了用户对于直接控制NAND的需求。所以,e-MMC可轻松用作嵌入式多媒体卡(MMC)存储器。
容量 | 器件型号 | Class | e-MMC 版本 | 最大数据速率 (MB/s) | 电源电压 | 工作 温度(°C) | 封装 | ||
---|---|---|---|---|---|---|---|---|---|
Vcc(V) | VccQ(V) | 尺寸(mm) | 代码 | ||||||
4 Gbytes | THGBMNG5D1LBAIT | Consumer | 5.0 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11×10×0.8 | P-WFBGA153-1110-0.50 |
THGBMNG5D1LBAIL | Consumer | 5.0 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11.5×13×0.8 | P-WFBGA153-1113-0.50 | |
8 Gbytes | THGBMHG6C1LBAIL | Consumer | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11.5×13×0.8 | P-WFBGA153-1113-0.50 |
THGBMHG6C1LBAU6 | Industrial | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -40 to 105 (1) | 11.5×13×0.8 | P-WFBGA153-1113-0.50 | |
16 Gbytes | THGBMHG7C1LBAIL | Consumer | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11.5×13×0.8 | P-WFBGA153-1113-0.50 |
THGBMHG7C2LBAU7 | Industrial | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -40 to 105 (1) | 11.5×13×1.0 | P-VFBGA153-1113-0.50 | |
32 Gbytes | THGBMHG8C2LBAIL | Consumer | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11.5×13×0.8 | P-WFBGA153-1113-0.50 |
THGBMHG8C4LBAU7 | Industrial | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -40 to 105 (1) | 11.5×13×1.0 | P-VFBGA153-1113-0.50 | |
64 Gbytes | THGBMHG9C4LBAIR | Consumer | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11.5×13×1.0 | P-VFBGA153-1113-0.50 |
THGBMHG9C8LBAU8 | Industrial | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -40 to 105 (1) | 11.5×13×1.2 | P-TFBGA153-1113-0.50 | |
128 Gbytes | THGBMHT0C8LBAIG | Consumer | 5.1 | 400 | 2.7 to 3.6 | 1.70 to 1.95, 2.7 to 3.6 | -25 to 85 | 11.5×13×1.2 | P-TFBGA153-1113-0.50 |
- 注解 (1):Tc=115°C(最大值)。
- Contact the Toshiba sales representative for sample schedule about products under development.
- Details about your intended usage would be checked before submitting samples of the Industrial class product.
- 金士顿eMMC
Kingston eMMC
金士顿eMMC 是嵌入式、非易失存储器系统,由闪存和闪存控制器构成,这不仅简化了应用程序接口设计,还免去了主机处理器的低级闪存管理任务。eMMC 是智能手机、平板电脑和移动互联网设备等众多消费类电子设备的主流存储组件。它越来越多地被应用于众多工业和嵌入式应用领域。
对于开发者而言,eMMC 简化了接口设计和验证流程,从而减少了产品上市时间并促进了对未来闪存设备产品的支持。
小的 BGA 封装尺寸和低功耗让 eMMC 成为移动产品和嵌入式产品的可行低成本存储器。为了更好地满足多空间受限和物联网应用的要求,金士顿发布了采用标准 JEDEC 的世界最小尺寸的 eMMC 封装。 。eMMC 技术规范由微电子工业开放标准制定全球领导者 JEDEC 管理。
金士顿 I-Temp eMMC
金士顿的工业温度 eMMC 产品符合最新 JEDEC eMMC 标准,并兼容以往 eMMC 标准。它拥有标准 eMMC 的所有优势,并且设备的工作温度范围符合工业工作温度要求 (-40°C~85°C),使其非常适合用作恶劣户外环境和汽车应用的存储解决方案。

eMMC 产品型号和规格
产品料号 | 容量 | eMMC 标准 | 封装尺寸 | NAND |
EMMC04G-M627 | 4GB | 5.0/5.1 (HS400) | 11.5x13x1.0 | MLC |
EMMC04G-M657 | 4GB | 5.0/5.1 (HS400) | 9.0×7.5×0.8 | MLC |
EMMC08G-M325 | 8GB | 5.0/5.1 (HS400) | 11.5x13x1.0 | MLC |
EMMC16G-TB29 | 16GB | 5.1 (HS400) | 11.5x13x0.8 | 3D TLC BiCS3 |
EMMC32G-TB29 | 32GB | 5.1 (HS400) | 11.5x13x0.8 | 3D TLC BiCS3 |
EMMC32G-TA29 | 32GB | 5.1 (HS400) | 11.5x13x0.8 | 3D TLC BiCS3 |
EMMC64G-TA29 | 64GB | 5.1 (HS400) | 11.5x13x0.8 | 3D TLC BiCS3 |
EMMC128-TA29 | 128GB | 5.1 (HS400) | 11.5x13x1.0 | 3D TLC BiCS3 |
eMMC 产品宣传册 PDFiTemp eMMC 产品宣传册 PDF请求信息
金士顿eMMC 适配器
对于尚无 eMMC 插槽布局的设计,这些 eMMC 转 SD/MMC 适配器可以让用户通过 SD/MMC 插槽来测试 eMMC,而无需更改 PCB 布局。

eMMC 适配器产品型号
产品料号 | 说明 |
EMMC04G-M627-ADP | 4GB eMMC 适配器 |
EMMC08G-M325-ADP | 8GB eMMC 适配器 |
EMMC16G-M525-ADP | 16GB eMMC 适配器 |
EMMC32G-M525-ADP | 32GB eMMC 适配器 |
EMMC64G-M525-ADP | 64GB eMMC 适配器 |
三星eMMC
Product Selector
Version | Density | Voltage | Interface | Package Size | Temp. |
---|---|---|---|---|---|
eMMC 5.1eMMC 5.0 | 256GB128GB64GB32GB16GB8GB4GB | 1.8 / 3.3 V1.8, 3.3 V / 3.3 V | HS400 | 11.5 x 13 x 1.2 mm11.5 x 13 x 1.0 mm11.5 x 13 x 0.8 mm11 x 10 x 0.8 mm | -40 ~ 85 °C-40 ~ 105 °C-25 ~ 85 °C |
Part Number | Version | Density | Voltage | Interface | Package Size | Temp. |
---|
KLM4G1FETE-B041 | eMMC 5.1 | 4GB | 1.8, 3.3 V / 3.3 V | HS400 | 11 x 10 x 0.8 mm | -25 ~ 85 °C | |
KLM8G1GESD-B03P | eMMC 5.0 | 8GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 85 °C | |
KLM8G1GESD-B03Q | eMMC 5.0 | 8GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 105 °C | |
KLM8G1GESD-B04P | eMMC 5.1 | 8GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 85 °C | |
KLM8G1GESD-B04Q | eMMC 5.1 | 8GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 105 °C | |
KLM8G1GETF-B041 | eMMC 5.1 | 8GB | 1.8, 3.3 V / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -25 ~ 85 °C | |
KLM8G1GEUF-B04P | eMMC 5.1 | 8GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 85 °C | |
KLM8G1GEUF-B04Q | eMMC 5.1 | 8GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 105 °C | |
KLMAG1JETD-B041 | eMMC 5.1 | 16GB | 1.8, 3.3 V / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -25 ~ 85 °C | |
KLMAG2GESD-B03P | eMMC 5.0 | 16GB | 1.8 / 3.3 V | HS400 | 11.5 x 13 x 0.8 mm | -40 ~ 85 °C |
- 美光eMMC
e.MMC Part Catalog
- 2GB
Part No. (1)
MTFC2GMDEA-0M WT2GBProductionWFBGA3.3V4.41-25C to +85C
- 4GB
Part No. (10)
MTFC4GACAAAM-1M WT4GBProductionVFBGA2.7V-3.6V4.5-25C to +85C
MTFC4GACAAAM-4M IT4GBEnd of LifeVFBGA2.7V-3.6V4.5-40C to +85C
MTFC4GACAANA-4M IT4GBProductionTBGA2.7V-3.6V4.5-40C to +85C
MTFC4GLGDM-AIT Z4GBProductionTFBGA2.7V-3.6V4.4-40C to +85C
MTFC4GLGDQ-AIT Z4GBProductionLBGA2.7V-3.6V4.4-40C to +85C
MTFC4GMTEA-WT4GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C
MTFC4GMWDM-3M AIT4GBProductionTFBGA2.7V-3.6V4.5-40C to +85C
MTFC4GMWDM-3M AIT A4GBProductionTFBGA2.7V-3.6V-40°C to +85°C
MTFC4GMWDQ-3M AIT4GBProductionLBGA2.7V-3.6V4.5-40C to +85C
MTFC4GMXEA-WT4GBObsoleteWFBGA2.7V-3.6V-25C to +85C
- 8GB
Part No. (18)
MTFC8GACAAAM-1M WT8GBEnd of LifeVFBGA2.7V-3.6V4.5-25C to +85C
MTFC8GACAAAM-4M IT8GBEnd of LifeVFBGA2.7V-3.6V4.5-40C to +85C
MTFC8GACAANA-4M IT8GBProductionTBGA2.7V-3.6V4.5-40C to +85C
MTFC8GAKAJCN-1M WT8GBProductionVFBGA3.3V5.0-25C to +85C
MTFC8GAKAJCN-4M IT8GBProductionVFBGA3.3V5.0-40C to +85C
MTFC8GLDDQ-4M IT8GBEnd of LifeLBGA3.3V4.41-40C to +85C
MTFC8GLDEA-4M IT8GBEnd of LifeWFBGA3.3V4.41-40C to +85C
MTFC8GLGDM-AIT Z8GBProductionTFBGA2.7V-3.6V4.4-40C to +85C
MTFC8GLGDQ-AIT Z8GBProductionLBGA2.7V-3.6V4.4-40C to +85C
MTFC8GLSEA-IT8GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C
MTFC8GLTEA-WT8GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C
MTFC8GLWDM-3M AIT Z8GBContact FactoryTFBGA2.7V-3.6V4.5-40C to +85C
MTFC8GLWDM-AIT A8GBProductionTFBGA2.7V-3.6V-40C to +85C
MTFC8GLWDM-AIT Z8GBProductionTFBGA2.7V-3.6V4.5-40C to +85C
MTFC8GLWDQ-3M AIT Z8GBProductionLFBGA2.7V-3.6V4.5-40C to +85C
MTFC8GLXEA-WT8GBObsoleteWFBGA2.7V-3.6V-25C to +85C
N2M400GDB321A3CE8GBObsoleteLBGA3.3V4.41-40C to +85C
N2M400GDB321A3CF8GBObsoleteLBGA3.3V4.41-40C to +85C
- 16GB
Part No. (20)
MTFC16GAKAECN-2M WT16GBEnd of LifeVFBGA3.3V5.0-25C to +85C
MTFC16GAKAECN-4M IT16GBEnd of LifeVFBGA3.3V5.0-40C to +85C
MTFC16GAKAEDQ-AIT16GBProductionLFBGA3.3V5.0-40C to +85C
MTFC16GAKAENA-4M IT16GBProductionTBGA3.3V5.0-40C to +85C
MTFC16GJDDQ-4M IT16GBObsoleteLBGA3.3V4.41-40C to +85C
MTFC16GJDEC-2M WT16GBObsoleteWFBGA3.3V4.41-25C to +85C
MTFC16GJDEC-4M IT16GBEnd of LifeWFBGA3.3V4.41-40C to +85C
MTFC16GJGDQ-AIT Z16GBProductionLBGA2.7V-3.6V4.4-40C to +85C
MTFC16GJGEF-AIT Z16GBContact FactoryTFBGA2.7V-3.6V4.4-40C to +85C
MTFC16GJSEC-IT16GBObsoleteWFBGA2.7V-3.6V4.41-40C to +85C
MTFC16GJVEC-2M WT16GBObsoleteWFBGA3.3V4.41-25C to +85C
MTFC16GJVEC-4M IT16GBObsoleteWFBGA3.3V4.41-40C to +85C
MTFC16GLTAM-WT16GBObsoleteVFBGA2.7V-3.6V4.41-25C to +85C
MTFC16GLTDV-WT16GBObsoleteVFBGA2.7V-3.6V4.41-25C to +85C
MTFC16GLWDM-4M AIT Z16GBProductionTFBGA2.7V-3.6V4.5-40C to +85C
MTFC16GLWDQ-4M AIT Z16GBProductionLFBGA2.7V-3.6V4.5-40C to +85C
MTFC16GLXAM-WT16GBObsoleteVFBGA2.7V-3.6V-25C to +85C
MTFC16GLXDV-WT16GBObsoleteVFBGA2.7V-3.6V-25C to +85C
N2M400HDB321A3CE16GBObsoleteLBGA3.3V4.41-40C to +85C
N2M400HDB321A3CF16GBObsoleteLBGA3.3V4.41-40C to +85C
- 32GB
Part No. (21)
MTFC2GMDEA-0M WT2GBProductionWFBGA3.3V4.41-25C to +85C
MTFC32GAKAECN-3M WT32GBEnd of LifeVFBGA3.3V5.0-25C to +85C
MTFC32GAKAECN-4M IT32GBEnd of LifeVFBGA3.3V5.0-40C to +85C
MTFC32GAKAEDQ-AIT32GBProductionLFBGA3.3V5.0-40C to +85C
MTFC32GAKAENA-4M IT32GBProductionTBGA3.3V5.0-40C to +85C
MTFC32GAMAKAM-WT32GBProductionVFBGA3.3V-25C to +85C
MTFC32GJDDQ-4M IT32GBEnd of LifeLBGA3.3V4.41-40C to +85C
MTFC32GJDED-3M WT32GBObsoleteWFBGA3.3V4.41-25C to +85C
MTFC32GJGDQ-AIT Z32GBProductionLBGA2.7V-3.6V-40C to +85C
MTFC32GJGEF-AIT Z32GBProductionTFBGA2.7V-3.6V4.4-40C to +85C
MTFC32GJTED-WT32GBObsoleteVFBGA2.7V-3.6V4.41-25C to +85C
MTFC32GJVED-3M WT32GBObsoleteVFBGA3.3V4.41-25C to +85C
MTFC32GJVED-4M IT32GBObsoleteVFBGA3.3V4.41-40C to +85C
MTFC32GJWDQ-4M AIT Z32GBProductionLFBGA2.7V-3.6V4.5-40C to +85C
MTFC32GJWEF-4M AIT Z32GBProductionTFBGA2.7V-3.6V4.5-40C to +85C
MTFC32GJXED-WT32GBObsoleteVFBGA2.7V-3.6V-25C to +85C
MTFC32GLTDI-WT32GBObsoleteTFBGA2.7V-3.6V4.41-25C to +85C
MTFC32GLTDM-WT32GBObsoleteTFBGA2.7V-3.6V4.41-25C to +85C
MTFC32GLXDM-WT32GBObsoleteTFBGA2.7V-3.6V-25C to +85C
N2M400JDB341A3CE32GBObsoleteLBGA3.3V4.41-40C to +85C
N2M400JDB341A3CF32GBObsoleteLBGA3.3V4.41-40C to +85C
- 64GB
Part No. (16)
MTFC4GACAAAM-1M WT4GBProductionVFBGA2.7V-3.6V4.5-25C to +85C
MTFC4GACAAAM-4M IT4GBEnd of LifeVFBGA2.7V-3.6V4.5-40C to +85C
MTFC4GACAANA-4M IT4GBProductionTBGA2.7V-3.6V4.5-40C to +85C
MTFC4GLGDM-AIT Z4GBProductionTFBGA2.7V-3.6V4.4-40C to +85C
MTFC4GLGDQ-AIT Z4GBProductionLBGA2.7V-3.6V4.4-40C to +85C
MTFC4GMTEA-WT4GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C
MTFC4GMWDM-3M AIT4GBProductionTFBGA2.7V-3.6V4.5-40C to +85C
MTFC4GMWDM-3M AIT A4GBProductionTFBGA2.7V-3.6V-40°C to +85°C
MTFC4GMWDQ-3M AIT4GBProductionLBGA2.7V-3.6V4.5-40C to +85C
MTFC4GMXEA-WT4GBObsoleteWFBGA2.7V-3.6V-25C to +85C
MTFC64GAJAEDQ-AIT64GBProductionLFBGA3.3V-40C to +85C
MTFC64GAKAEYF-4M IT64GBProductionLFBGA3.3V5.0-40C to +85C
MTFC64GJVDN-3M WT64GBObsoleteLFBGA3.3V4.41-25C to +85C
MTFC64GJVDN-4M IT64GBObsoleteLFBGA3.3V4.41-40C to +85C
N2M400KDA345K3BE64GBObsoleteLBGA3.3V-40C to +85C
N2M400KDA345K3BF64GBObsoleteLBGA3.3V-40C to +85C
- 海力士eMMC
Density | Product | NAND Information | Part number | Package Size | Package Type |
---|---|---|---|---|---|
32GB | UFS2.1 | 3D-V2 128Gb | H28U62301AMR | 11.5x13x1.0 | 153ball FBGA |
UFS2.1 | 3D-V3 128Gb | H28S6D302BMR | 11.5x13x1.0 | 153ball FBGA | |
64GB | UFS2.1 | 3D-V2 128Gb | H28U74301AMR | 11.5x13x1.0 | 153ball FBGA |
UFS2.1 | 3D-V3 128Gb | H28S7Q302BMR | 11.5x13x1.0 | 153ball FBGA | |
128GB | UFS2.1 | 3D-V2 128Gb | H28U88301AMR | 11.5x13x1.0 | 153ball FBGA |
UFS2.1 | 3D-V4 256Gb | H28S8Q302CMR | 11.5x13x1.0 | 153ball FBGA | |
256GB | UFS2.1 | 3D-V4 256Gb | H28S9O302BMR | 11.5x13x1.0 | 153ball FBGA |
UFS
东芝UFS
东芝存储器株式会社具有集成控制器的NAND闪存(NAND)能提供纠错、耗损均衡、坏块管理等功能。它们具有符合JEDEC/UFS版本2.1的接口,从而消除了用户对NAND特定控制的要求。
这简化了闪存存储在嵌入式应用中的集成。
容量 | 器件型号 | UFS 版本 | 最大数据速率 (MB/s) | 电源电压 | 工作温度 (℃) | 封装 | |||
---|---|---|---|---|---|---|---|---|---|
VCC (V) | VCCQ (V) | VCCQ2 (V) | 尺寸(mm) | 代码 | |||||
32GB | THGAF8G8T23BAIL * | 2.1 | 1166 | 2.7至3.6 | –(1) | 1.70至1.95 | -25至85 | 11.5 x 13 x 0.8 | P-WFBGA153-1113-0.50 |
64GB | THGAF8G9T43BAIR * | 2.1 | 1166 | 2.7至3.6 | –(1) | 1.70至1.95 | -25至85 | 11.5 x 13 x 1.0 | P-VFBGA153-1113-0.50 |
128GB | THGAF8T0T43BAIR * | 2.1 | 1166 | 2.7至3.6 | –(1) | 1.70至1.95 | -25至85 | 11.5 x 13 x 1.0 | P-VFBGA153-1113-0.50 |
256GB | THGAF8T1T83BAIR * | 2.1 | 1166 | 2.7至3.6 | –(1) | 1.70至1.95 | -25至85 | 11.5 x 13 x 1.0 | P-VFBGA153-1113-0.50 |
- 注解(1):该产品支持Vcc和VccQ2双电源操作。无需提供。
- *新产品:请联系东芝存储器株式会社销售代表以获取新产品样品供应计划。
- 三星eUFS
Product Selector
Version | Density | Voltage | Interface | Package Size | Temp. | Product Status |
---|---|---|---|---|---|---|
UFS 2.1 | 1TB512GB256GB128GB64GB32GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.72 mm11.5 x 13 x 1.4 mm11.5 x 13 x 1.2 mm11.5 x 13 x 1.0 mm | -40 ~ 85 °C-40 ~ 105 °C-25 ~ 85 °C | Mass Production |
Part Number | Version | Density | Voltage | Interface | Package Size | Temp. | Product Status |
---|
KLUBG4G1ZF-B0CP | UFS 2.1 | 32GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.2 mm | -40 ~ 85 °C | Mass Production | |
KLUBG4G1ZF-B0CQ | UFS 2.1 | 32GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.2 mm | -40 ~ 105 °C | Mass Production | |
KLUCG2K1EA-B0C1 | UFS 2.1 | 64GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.0 mm | -25 ~ 85 °C | Mass Production | |
KLUCG4J1ED-B0C1 | UFS 2.1 | 64GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.0 mm | -25 ~ 85 °C | Mass Production | |
KLUCG4J1ZD-B0CP | UFS 2.1 | 64GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.2 mm | -40 ~ 85 °C | Mass Production | |
KLUDG4U1EA-B0C1 | UFS 2.1 | 128GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.0 mm | -25 ~ 85 °C | Mass Production | |
KLUDG8J1ZD-B0CP | UFS 2.1 | 128GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.2 mm | -40 ~ 85 °C | Mass Production | |
KLUDG8J1ZD-B0CQ | UFS 2.1 | 128GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.2 mm | -40 ~ 105 °C | Mass Production | |
KLUEG8U1EA-B0C1 | UFS 2.1 | 256GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.0 mm | -25 ~ 85 °C | Mass Production | |
KLUEGAJ1ZD-B0CP | UFS 2.1 | 256GB | 1.8 / 3.3 V | G3 2Lane | 11.5 x 13 x 1.72 mm | -40 ~ 85 °C | Mass Production |
海力士UFS
Key features of UFS 2.0
Density | Product | NAND Information | Part number | Package Size | Package Type |
---|---|---|---|---|---|
32GB | UFS2.1 | 3D-V2 128Gb | H28U62301AMR | 11.5x13x1.0 | 153ball FBGA |
UFS2.1 | 3D-V3 128Gb | H28S6D302BMR | 11.5x13x1.0 | 153ball FBGA | |
64GB | UFS2.1 | 3D-V2 128Gb | H28U74301AMR | 11.5x13x1.0 | 153ball FBGA |
UFS2.1 | 3D-V3 128Gb | H28S7Q302BMR | 11.5x13x1.0 | 153ball FBGA | |
128GB | UFS2.1 | 3D-V2 128Gb | H28U88301AMR | 11.5x13x1.0 | 153ball FBGA |
UFS2.1 | 3D-V4 256Gb | H28S8Q302CMR | 11.5x13x1.0 | 153ball FBGA | |
256GB | UFS2.1 | 3D-V4 256Gb | H28S9O302BMR | 11.5x13x1.0 | 153ball FBGA |
- UFS2.0 compatible
- Operation Voltage Rage
- – VCC (NAND): 2.7V ~ 3.6V
- – VCCQ (CTRL): not used
- – VCCQ2 (CTRL): 1.7V ~ 1.95V
- Temperature
- – Operation Temperature (-25℃ ~ 85℃ )
- – Storage Temperature (-40℃ ~ 85℃ )
- Supported features
- – Erase / Discard / Purge / Wipe
- – PWM G1-G5 / HS-G1-G3
- – H@-G3 1L/2L
- – Command Queuing / Cache
- RPMB / Boot LU
- Power-on / HW / Endpoint / LU Retest
- BKOP
- High Priority LU
- Reliability Write Operation
- Write Protect
- Task Management Operation
- Context ID, Data Tag
- Secure Removal Type
- Power Management Operations
- UFS2.1 Device Health Descriptor
- UFS2.1 Field Firmware Update
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