分类目录产品目录

e-MMC

  • 东芝eMMC

e-MMC是指一系列具有ECC、耗损均衡和坏块管理等控制功能的NAND闪存(NAND)。e-MMC也提供符合JEDEC/MMCA版本 4.5/5.0/5.1的高速存储卡接口,从而消除了用户对于直接控制NAND的需求。所以,e-MMC可轻松用作嵌入式多媒体卡(MMC)存储器。

容量器件型号Classe-MMC
版本
最大数据速率
(MB/s)
电源电压工作
温度(°C)
封装
Vcc(V)VccQ(V)尺寸(mm)代码
4 GbytesTHGBMNG5D1LBAITConsumer5.04002.7 to 3.61.70 to 1.95,
2.7 to 3.6
-25 to 8511×10×0.8P-WFBGA153-1110-0.50
THGBMNG5D1LBAILConsumer5.04002.7 to 3.61.70 to 1.95, 2.7 to 3.6-25 to 8511.5×13×0.8P-WFBGA153-1113-0.50
8 GbytesTHGBMHG6C1LBAILConsumer5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-25 to 8511.5×13×0.8P-WFBGA153-1113-0.50
THGBMHG6C1LBAU6Industrial5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-40 to 105 (1)11.5×13×0.8P-WFBGA153-1113-0.50
16 GbytesTHGBMHG7C1LBAILConsumer5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-25 to 8511.5×13×0.8P-WFBGA153-1113-0.50
THGBMHG7C2LBAU7Industrial5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-40 to 105 (1)11.5×13×1.0P-VFBGA153-1113-0.50
32 GbytesTHGBMHG8C2LBAILConsumer5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-25 to 8511.5×13×0.8P-WFBGA153-1113-0.50
THGBMHG8C4LBAU7Industrial5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-40 to 105 (1)11.5×13×1.0P-VFBGA153-1113-0.50
64 GbytesTHGBMHG9C4LBAIRConsumer5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-25 to 8511.5×13×1.0P-VFBGA153-1113-0.50
THGBMHG9C8LBAU8Industrial5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-40 to 105 (1)11.5×13×1.2P-TFBGA153-1113-0.50
128 GbytesTHGBMHT0C8LBAIGConsumer5.14002.7 to 3.61.70 to 1.95, 2.7 to 3.6-25 to 8511.5×13×1.2P-TFBGA153-1113-0.50
  • 注解 (1):Tc=115°C(最大值)。
  • Contact the Toshiba sales representative for sample schedule about products under development.
  • Details about your intended usage would be checked before submitting samples of the Industrial class product.

  • 金士顿eMMC
Kingston eMMC

金士顿eMMC™ 是嵌入式、非易失存储器系统,由闪存和闪存控制器构成,这不仅简化了应用程序接口设计,还免去了主机处理器的低级闪存管理任务。eMMC 是智能手机、平板电脑和移动互联网设备等众多消费类电子设备的主流存储组件。它越来越多地被应用于众多工业和嵌入式应用领域。

对于开发者而言,eMMC 简化了接口设计和验证流程,从而减少了产品上市时间并促进了对未来闪存设备产品的支持。

小的 BGA 封装尺寸和低功耗让 eMMC 成为移动产品和嵌入式产品的可行低成本存储器。为了更好地满足多空间受限和物联网应用的要求,金士顿发布了采用标准 JEDEC 的世界最小尺寸的 eMMC 封装。 。eMMC 技术规范由微电子工业开放标准制定全球领导者 JEDEC 管理。

金士顿 I-Temp eMMC

金士顿的工业温度 eMMC 产品符合最新 JEDEC eMMC 标准,并兼容以往 eMMC 标准。它拥有标准 eMMC 的所有优势,并且设备的工作温度范围符合工业工作温度要求 (-40°C~85°C),使其非常适合用作恶劣户外环境和汽车应用的存储解决方案。

eMMC 产品型号和规格
产品料号容量eMMC 标准封装尺寸NAND
EMMC04G-M6274GB5.0/5.1 (HS400)11.5x13x1.0MLC
EMMC04G-M6574GB5.0/5.1 (HS400)9.0×7.5×0.8MLC
EMMC08G-M3258GB5.0/5.1 (HS400)11.5x13x1.0MLC
EMMC16G-TB2916GB5.1 (HS400)11.5x13x0.83D TLC BiCS3
EMMC32G-TB2932GB5.1 (HS400)11.5x13x0.83D TLC BiCS3
EMMC32G-TA2932GB5.1 (HS400)11.5x13x0.83D TLC BiCS3
EMMC64G-TA2964GB5.1 (HS400)11.5x13x0.83D TLC BiCS3
EMMC128-TA29128GB5.1 (HS400)11.5x13x1.03D TLC BiCS3

eMMC 产品宣传册 PDFiTemp eMMC 产品宣传册 PDF请求信息

金士顿eMMC 适配器

对于尚无 eMMC 插槽布局的设计,这些 eMMC 转 SD/MMC 适配器可以让用户通过 SD/MMC 插槽来测试 eMMC,而无需更改 PCB 布局。

eMMC 适配器产品型号
产品料号说明
EMMC04G-M627-ADP4GB eMMC 适配器
EMMC08G-M325-ADP8GB eMMC 适配器
EMMC16G-M525-ADP16GB eMMC 适配器
EMMC32G-M525-ADP32GB eMMC 适配器
EMMC64G-M525-ADP64GB eMMC 适配器

三星eMMC

Product Selector

VersionDensityVoltageInterfacePackage SizeTemp.
eMMC 5.1eMMC 5.0256GB128GB64GB32GB16GB8GB4GB1.8 / 3.3 V1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 1.2 mm11.5 x 13 x 1.0 mm11.5 x 13 x 0.8 mm11 x 10 x 0.8 mm-40 ~ 85 °C-40 ~ 105 °C-25 ~ 85 °C
Part NumberVersionDensityVoltageInterfacePackage SizeTemp.
KLM4G1FETE-B041eMMC 5.14GB1.8, 3.3 V / 3.3 VHS40011 x 10 x 0.8 mm-25 ~ 85 °C
KLM8G1GESD-B03PeMMC 5.08GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLM8G1GESD-B03QeMMC 5.08GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLM8G1GESD-B04PeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLM8G1GESD-B04QeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLM8G1GETF-B041eMMC 5.18GB1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLM8G1GEUF-B04PeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLM8G1GEUF-B04QeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLMAG1JETD-B041eMMC 5.116GB1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLMAG2GESD-B03PeMMC 5.016GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
  • 美光eMMC

e.MMC Part Catalog

  • 2GB
Part No. (1)

MTFC2GMDEA-0M WT2GBProductionWFBGA3.3V4.41-25C to +85C

  • 4GB
Part No. (10)

MTFC4GACAAAM-1M WT4GBProductionVFBGA2.7V-3.6V4.5-25C to +85C

MTFC4GACAAAM-4M IT4GBEnd of LifeVFBGA2.7V-3.6V4.5-40C to +85C

MTFC4GACAANA-4M IT4GBProductionTBGA2.7V-3.6V4.5-40C to +85C

MTFC4GLGDM-AIT Z4GBProductionTFBGA2.7V-3.6V4.4-40C to +85C

MTFC4GLGDQ-AIT Z4GBProductionLBGA2.7V-3.6V4.4-40C to +85C

MTFC4GMTEA-WT4GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C

MTFC4GMWDM-3M AIT4GBProductionTFBGA2.7V-3.6V4.5-40C to +85C

MTFC4GMWDM-3M AIT A4GBProductionTFBGA2.7V-3.6V-40°C to +85°C

MTFC4GMWDQ-3M AIT4GBProductionLBGA2.7V-3.6V4.5-40C to +85C

MTFC4GMXEA-WT4GBObsoleteWFBGA2.7V-3.6V-25C to +85C

  • 8GB
Part No. (18)

MTFC8GACAAAM-1M WT8GBEnd of LifeVFBGA2.7V-3.6V4.5-25C to +85C

MTFC8GACAAAM-4M IT8GBEnd of LifeVFBGA2.7V-3.6V4.5-40C to +85C

MTFC8GACAANA-4M IT8GBProductionTBGA2.7V-3.6V4.5-40C to +85C

MTFC8GAKAJCN-1M WT8GBProductionVFBGA3.3V5.0-25C to +85C

MTFC8GAKAJCN-4M IT8GBProductionVFBGA3.3V5.0-40C to +85C

MTFC8GLDDQ-4M IT8GBEnd of LifeLBGA3.3V4.41-40C to +85C

MTFC8GLDEA-4M IT8GBEnd of LifeWFBGA3.3V4.41-40C to +85C

MTFC8GLGDM-AIT Z8GBProductionTFBGA2.7V-3.6V4.4-40C to +85C

MTFC8GLGDQ-AIT Z8GBProductionLBGA2.7V-3.6V4.4-40C to +85C

MTFC8GLSEA-IT8GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C

MTFC8GLTEA-WT8GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C

MTFC8GLWDM-3M AIT Z8GBContact FactoryTFBGA2.7V-3.6V4.5-40C to +85C

MTFC8GLWDM-AIT A8GBProductionTFBGA2.7V-3.6V-40C to +85C

MTFC8GLWDM-AIT Z8GBProductionTFBGA2.7V-3.6V4.5-40C to +85C

MTFC8GLWDQ-3M AIT Z8GBProductionLFBGA2.7V-3.6V4.5-40C to +85C

MTFC8GLXEA-WT8GBObsoleteWFBGA2.7V-3.6V-25C to +85C

N2M400GDB321A3CE8GBObsoleteLBGA3.3V4.41-40C to +85C

N2M400GDB321A3CF8GBObsoleteLBGA3.3V4.41-40C to +85C

  • 16GB
Part No. (20)

MTFC16GAKAECN-2M WT16GBEnd of LifeVFBGA3.3V5.0-25C to +85C

MTFC16GAKAECN-4M IT16GBEnd of LifeVFBGA3.3V5.0-40C to +85C

MTFC16GAKAEDQ-AIT16GBProductionLFBGA3.3V5.0-40C to +85C

MTFC16GAKAENA-4M IT16GBProductionTBGA3.3V5.0-40C to +85C

MTFC16GJDDQ-4M IT16GBObsoleteLBGA3.3V4.41-40C to +85C

MTFC16GJDEC-2M WT16GBObsoleteWFBGA3.3V4.41-25C to +85C

MTFC16GJDEC-4M IT16GBEnd of LifeWFBGA3.3V4.41-40C to +85C

MTFC16GJGDQ-AIT Z16GBProductionLBGA2.7V-3.6V4.4-40C to +85C

MTFC16GJGEF-AIT Z16GBContact FactoryTFBGA2.7V-3.6V4.4-40C to +85C

MTFC16GJSEC-IT16GBObsoleteWFBGA2.7V-3.6V4.41-40C to +85C

MTFC16GJVEC-2M WT16GBObsoleteWFBGA3.3V4.41-25C to +85C

MTFC16GJVEC-4M IT16GBObsoleteWFBGA3.3V4.41-40C to +85C

MTFC16GLTAM-WT16GBObsoleteVFBGA2.7V-3.6V4.41-25C to +85C

MTFC16GLTDV-WT16GBObsoleteVFBGA2.7V-3.6V4.41-25C to +85C

MTFC16GLWDM-4M AIT Z16GBProductionTFBGA2.7V-3.6V4.5-40C to +85C

MTFC16GLWDQ-4M AIT Z16GBProductionLFBGA2.7V-3.6V4.5-40C to +85C

MTFC16GLXAM-WT16GBObsoleteVFBGA2.7V-3.6V-25C to +85C

MTFC16GLXDV-WT16GBObsoleteVFBGA2.7V-3.6V-25C to +85C

N2M400HDB321A3CE16GBObsoleteLBGA3.3V4.41-40C to +85C

N2M400HDB321A3CF16GBObsoleteLBGA3.3V4.41-40C to +85C

  • 32GB
Part No. (21)

MTFC2GMDEA-0M WT2GBProductionWFBGA3.3V4.41-25C to +85C

MTFC32GAKAECN-3M WT32GBEnd of LifeVFBGA3.3V5.0-25C to +85C

MTFC32GAKAECN-4M IT32GBEnd of LifeVFBGA3.3V5.0-40C to +85C

MTFC32GAKAEDQ-AIT32GBProductionLFBGA3.3V5.0-40C to +85C

MTFC32GAKAENA-4M IT32GBProductionTBGA3.3V5.0-40C to +85C

MTFC32GAMAKAM-WT32GBProductionVFBGA3.3V-25C to +85C

MTFC32GJDDQ-4M IT32GBEnd of LifeLBGA3.3V4.41-40C to +85C

MTFC32GJDED-3M WT32GBObsoleteWFBGA3.3V4.41-25C to +85C

MTFC32GJGDQ-AIT Z32GBProductionLBGA2.7V-3.6V-40C to +85C

MTFC32GJGEF-AIT Z32GBProductionTFBGA2.7V-3.6V4.4-40C to +85C

MTFC32GJTED-WT32GBObsoleteVFBGA2.7V-3.6V4.41-25C to +85C

MTFC32GJVED-3M WT32GBObsoleteVFBGA3.3V4.41-25C to +85C

MTFC32GJVED-4M IT32GBObsoleteVFBGA3.3V4.41-40C to +85C

MTFC32GJWDQ-4M AIT Z32GBProductionLFBGA2.7V-3.6V4.5-40C to +85C

MTFC32GJWEF-4M AIT Z32GBProductionTFBGA2.7V-3.6V4.5-40C to +85C

MTFC32GJXED-WT32GBObsoleteVFBGA2.7V-3.6V-25C to +85C

MTFC32GLTDI-WT32GBObsoleteTFBGA2.7V-3.6V4.41-25C to +85C

MTFC32GLTDM-WT32GBObsoleteTFBGA2.7V-3.6V4.41-25C to +85C

MTFC32GLXDM-WT32GBObsoleteTFBGA2.7V-3.6V-25C to +85C

N2M400JDB341A3CE32GBObsoleteLBGA3.3V4.41-40C to +85C

N2M400JDB341A3CF32GBObsoleteLBGA3.3V4.41-40C to +85C

  • 64GB
Part No. (16)

MTFC4GACAAAM-1M WT4GBProductionVFBGA2.7V-3.6V4.5-25C to +85C

MTFC4GACAAAM-4M IT4GBEnd of LifeVFBGA2.7V-3.6V4.5-40C to +85C

MTFC4GACAANA-4M IT4GBProductionTBGA2.7V-3.6V4.5-40C to +85C

MTFC4GLGDM-AIT Z4GBProductionTFBGA2.7V-3.6V4.4-40C to +85C

MTFC4GLGDQ-AIT Z4GBProductionLBGA2.7V-3.6V4.4-40C to +85C

MTFC4GMTEA-WT4GBObsoleteWFBGA2.7V-3.6V4.41-25C to +85C

MTFC4GMWDM-3M AIT4GBProductionTFBGA2.7V-3.6V4.5-40C to +85C

MTFC4GMWDM-3M AIT A4GBProductionTFBGA2.7V-3.6V-40°C to +85°C

MTFC4GMWDQ-3M AIT4GBProductionLBGA2.7V-3.6V4.5-40C to +85C

MTFC4GMXEA-WT4GBObsoleteWFBGA2.7V-3.6V-25C to +85C

MTFC64GAJAEDQ-AIT64GBProductionLFBGA3.3V-40C to +85C

MTFC64GAKAEYF-4M IT64GBProductionLFBGA3.3V5.0-40C to +85C

MTFC64GJVDN-3M WT64GBObsoleteLFBGA3.3V4.41-25C to +85C

MTFC64GJVDN-4M IT64GBObsoleteLFBGA3.3V4.41-40C to +85C

N2M400KDA345K3BE64GBObsoleteLBGA3.3V-40C to +85C

N2M400KDA345K3BF64GBObsoleteLBGA3.3V-40C to +85C


  • 海力士eMMC
DensityProductNAND InformationPart numberPackage SizePackage Type
32GBUFS2.13D-V2 128GbH28U62301AMR11.5x13x1.0153ball FBGA
UFS2.13D-V3 128GbH28S6D302BMR11.5x13x1.0153ball FBGA
64GBUFS2.13D-V2 128GbH28U74301AMR11.5x13x1.0153ball FBGA
UFS2.13D-V3 128GbH28S7Q302BMR11.5x13x1.0153ball FBGA
128GBUFS2.13D-V2 128GbH28U88301AMR11.5x13x1.0153ball FBGA
UFS2.13D-V4 256GbH28S8Q302CMR11.5x13x1.0153ball FBGA
256GBUFS2.13D-V4 256GbH28S9O302BMR11.5x13x1.0153ball FBGA

UFS

东芝UFS

东芝存储器株式会社具有集成控制器的NAND闪存(NAND)能提供纠错、耗损均衡、坏块管理等功能。它们具有符合JEDEC/UFS版本2.1的接口,从而消除了用户对NAND特定控制的要求。

这简化了闪存存储在嵌入式应用中的集成。

容量器件型号UFS
版本
最大数据速率
(MB/s)
电源电压工作温度
(℃)
封装
VCC
(V)
VCCQ
(V)
VCCQ2
(V)
尺寸(mm)代码
32GBTHGAF8G8T23BAIL *2.111662.7至3.6(1)1.70至1.95-25至8511.5 x 13 x 0.8P-WFBGA153-1113-0.50
64GBTHGAF8G9T43BAIR *2.111662.7至3.6(1)1.70至1.95-25至8511.5 x 13 x 1.0P-VFBGA153-1113-0.50
128GBTHGAF8T0T43BAIR *2.111662.7至3.6(1)1.70至1.95-25至8511.5 x 13 x 1.0P-VFBGA153-1113-0.50
256GBTHGAF8T1T83BAIR *2.111662.7至3.6(1)1.70至1.95-25至8511.5 x 13 x 1.0P-VFBGA153-1113-0.50
  • 注解(1):该产品支持Vcc和VccQ2双电源操作。无需提供。
  • *新产品:请联系东芝存储器株式会社销售代表以获取新产品样品供应计划。

  • 三星eUFS

Product Selector

VersionDensityVoltageInterfacePackage SizeTemp.Product Status
UFS 2.11TB512GB256GB128GB64GB32GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.72 mm11.5 x 13 x 1.4 mm11.5 x 13 x 1.2 mm11.5 x 13 x 1.0 mm-40 ~ 85 °C-40 ~ 105 °C-25 ~ 85 °CMass Production
Part NumberVersionDensityVoltageInterfacePackage SizeTemp.Product Status
KLUBG4G1ZF-B0CPUFS 2.132GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.2 mm-40 ~ 85 °CMass Production
KLUBG4G1ZF-B0CQUFS 2.132GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.2 mm-40 ~ 105 °CMass Production
KLUCG2K1EA-B0C1UFS 2.164GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.0 mm-25 ~ 85 °CMass Production
KLUCG4J1ED-B0C1UFS 2.164GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.0 mm-25 ~ 85 °CMass Production
KLUCG4J1ZD-B0CPUFS 2.164GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.2 mm-40 ~ 85 °CMass Production
KLUDG4U1EA-B0C1UFS 2.1128GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.0 mm-25 ~ 85 °CMass Production
KLUDG8J1ZD-B0CPUFS 2.1128GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.2 mm-40 ~ 85 °CMass Production
KLUDG8J1ZD-B0CQUFS 2.1128GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.2 mm-40 ~ 105 °CMass Production
KLUEG8U1EA-B0C1UFS 2.1256GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.0 mm-25 ~ 85 °CMass Production
KLUEGAJ1ZD-B0CPUFS 2.1256GB1.8 / 3.3 VG3 2Lane11.5 x 13 x 1.72 mm-40 ~ 85 °CMass Production

海力士UFS

Key features of UFS 2.0

DensityProductNAND InformationPart numberPackage SizePackage Type
32GBUFS2.13D-V2 128GbH28U62301AMR11.5x13x1.0153ball FBGA
UFS2.13D-V3 128GbH28S6D302BMR11.5x13x1.0153ball FBGA
64GBUFS2.13D-V2 128GbH28U74301AMR11.5x13x1.0153ball FBGA
UFS2.13D-V3 128GbH28S7Q302BMR11.5x13x1.0153ball FBGA
128GBUFS2.13D-V2 128GbH28U88301AMR11.5x13x1.0153ball FBGA
UFS2.13D-V4 256GbH28S8Q302CMR11.5x13x1.0153ball FBGA
256GBUFS2.13D-V4 256GbH28S9O302BMR11.5x13x1.0153ball FBGA
  • UFS2.0 compatible
  • Operation Voltage Rage
    • – VCC (NAND): 2.7V ~ 3.6V
    • – VCCQ (CTRL): not used
    • – VCCQ2 (CTRL): 1.7V ~ 1.95V
  • Temperature
    • – Operation Temperature (-25℃ ~ 85℃ )
    • – Storage Temperature (-40℃ ~ 85℃ )
  • Supported features
    • – Erase / Discard / Purge / Wipe
    • – PWM G1-G5 / HS-G1-G3
    • – H@-G3 1L/2L
    • – Command Queuing / Cache
  • RPMB / Boot LU
  • Power-on / HW / Endpoint / LU Retest
  • BKOP
  • High Priority LU
  • Reliability Write Operation
  • Write Protect
  • Task Management Operation
  • Context ID, Data Tag
  • Secure Removal Type
  • Power Management Operations
  • UFS2.1 Device Health Descriptor
  • UFS2.1 Field Firmware Update

eMCP

  • 三星eMCP

Product Selector

VersionDensityVoltageInterfacePackage SizeTemp.
eMMC 5.1eMMC 5.0256GB128GB64GB32GB16GB8GB4GB1.8 / 3.3 V1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 1.2 mm11.5 x 13 x 1.0 mm11.5 x 13 x 0.8 mm11 x 10 x 0.8 mm-40 ~ 85 °C-40 ~ 105 °C-25 ~ 85 °C
Part NumberVersionDensityVoltageInterfacePackage SizeTemp.
KLM4G1FETE-B041eMMC 5.14GB1.8, 3.3 V / 3.3 VHS40011 x 10 x 0.8 mm-25 ~ 85 °C
KLM8G1GESD-B03PeMMC 5.08GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLM8G1GESD-B03QeMMC 5.08GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLM8G1GESD-B04PeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLM8G1GESD-B04QeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLM8G1GETF-B041eMMC 5.18GB1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLM8G1GEUF-B04PeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLM8G1GEUF-B04QeMMC 5.18GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLMAG1JETD-B041eMMC 5.116GB1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLMAG2GESD-B03PeMMC 5.016GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLMAG2GESD-B03QeMMC 5.016GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLMAG2GESD-B04PeMMC 5.116GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLMAG2GESD-B04QeMMC 5.116GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLMAG2GEUF-B04PeMMC 5.116GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLMAG2GEUF-B04QeMMC 5.116GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLMBG2JETD-B041eMMC 5.132GB1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLMBG4GESD-B03PeMMC 5.032GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 85 °C
KLMBG4GESD-B03QeMMC 5.032GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 105 °C
KLMBG4GESD-B04PeMMC 5.132GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 85 °C
KLMBG4GESD-B04QeMMC 5.132GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 85 °C
KLMBG4GEUF-B04PeMMC 5.132GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 85 °C
KLMBG4GEUF-B04QeMMC 5.132GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-40 ~ 105 °C
KLMCG2KCTA-B041eMMC 5.164GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLMCG2UCTA-B041eMMC 5.164GB1.8 / 3.3 VHS40011.5 x 13 x 0.8 mm-25 ~ 85 °C
KLMCG4JETD-B041eMMC 5.164GB1.8, 3.3 V / 3.3 VHS40011.5 x 13 x 1.0 mm-25 ~ 85 °C
KLMCG4JEUD-B04PeMMC 5.164GB1.8 / 3.3 VHS40011.5 x 13 x 1.2 mm-40 ~ 85 °C
KLMCG4JEUD-B04QeMMC 5.164GB1.8 / 3.3 VHS40011.5 x 13 x 1.2 mm-40 ~ 105 °C
KLMCG8GESD-B03PeMMC 5.064GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 85 °C
KLMCG8GESD-B03QeMMC 5.064GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 105 °C
KLMCG8GESD-B04PeMMC 5.164GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 85 °C
KLMCG8GESD-B04QeMMC 5.164GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-40 ~ 105 °C
KLMDG4UCTA-B041eMMC 5.1128GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-25 ~ 85 °C
KLMDG8JEUD-B04PeMMC 5.1128GB1.8 / 3.3 VHS40011.5 x 13 x 1.2 mm-40 ~ 85 °C
KLMDG8JEUD-B04QeMMC 5.1128GB1.8 / 3.3 VHS40011.5 x 13 x 1.2 mm-40 ~ 105 °C
KLMEG8UCTA-B041eMMC 5.1256GB1.8 / 3.3 VHS40011.5 x 13 x 1.0 mm-25 ~ 85 °C


eMCP 产品型号和规格

金士顿提供各种 JEDEC 标准 eMCP 组件。eMCP 在一个小型封装中集成了 eMMC 与低功耗 DRAM。此解决方案简化了系统 PCB 设计,并加快了产品上市速度。eMCP 是整合的存储和内存组件,非常适合智能手机、平板电脑、可穿戴设备及各种物流网设备等空间受限的系统。

LPDDR2 eMCP P/NsLPDDR2 eMCP CapacitySpeed Modee•MMC versionPackage Size
04EMCP04-NL2DM6274GB eMMC + 4Gb LPDDR2HS2005.011.5 x 13 x 1.0 (162 Ball)
08EMCP04-NL2DT2278GB eMMC + 4Gb LPDDR2HS2005.011.5 x 13 x 1.0 (162 Ball)
08EMCP08-NL2DT2278GB eMMC + 8Gb LPDDR2HS2005.011.5 x 13 x 1.0 (162 Ball)

LPDDR3 eMCP P/NsLPDDR3 eMCP CapacitySpeed Modee•MMC versionPackage Size
04EMCP04-NL3DM6274GB eMMC + 4Gb LPDDR3HS4005.011.5 x 13 x 1.0 (221 Ball)
08EMCP04-NL3DT2278GB eMMC + 4Gb LPDDR3HS4005.011.5 x 13 x 1.0 (221 Ball)
08EMCP08-NL3DT2278GB eMMC + 8Gb LPDDR3HS4005.011.5 x 13 x 1.0 (221 Ball)
16EMCP08-NL3DTB2816GB eMMC + 8Gb LPDDR3HS4005.111.5 x 13 x 1.0 (221 Ball)
16EMCP16-EL3GTB2916GB eMMC + 16Gb LPDDR3HS4005.111.5 x 13 x 1.0 (221 Ball)
32EMCP16-EL3GTB2932GB eMMC + 16Gb LPDDR3HS4005.111.5 x 13 x 1.0 (221 Ball)
32EMCP24-EL3JTB2932GB eMMC + 24Gb LPDDR3HS4005.111.5 x 13 x 1.0 (221 Ball)
64EMCP24-EL3JTA2964GB eMMC + 24Gb LPDDR3HS4005.111.5 x 13 x 1.0 (221 Ball)
64EMCP32-EL3HTA2964GB eMMC + 32Gb LPDDR3HS4005.111.5 x 13 x 1.1 (221 Ball)

  • 美光eMCP

e.MMC-Based MCP

DRAM Density

Select DRAM Density

  • 4Gb

Range: 4Gb – 48Gb

  • DRAM TypeLPDDR2, LPDDR3
  • Widthx8, x32
  • Voltage3.3V
  • PackageVFBGA
  • Op. Temp.-25C to +85C

View 4Gb eMMC-Based MCP Part CatalogView Full eMMC-Based MCP Part Catalog

  • 4G
Part No. (4)

MT29PZZZ4C4WKETF-18 W 4Gb LPDDR2 Obsoletex 16×8 1.8V

MT29PZZZ4D4BKESK-18 W 4Gb LPDDR2 Productionx 32×8 3.3V

MT29PZZZ4D4WKETF-18 W 4Gb LPDDR2 Obsoletex 32×8 1.8V

MT29TZZZ4D4BKERL-125 W 4Gb LPDDR3 Contact Factoryx 8×32 3.3V

  • 8Gb
Part No. (8)

MT29PZZZ8D4BKFSK-18 W8GbLPDDR2Obsoletex32x83.3V

MT29PZZZ8D5BKFTF-18 W 8Gb LPDDR2 Obsoletex32x323.3V

MT29TZZZ8D4BKFRL-125 W 8Gb LPDDR3 Obsoletex 32×8 3.3V

MT29TZZZ8D5BKFAH-125 W8Gb LPDDR3 Obsoletex 32×8 3.3V

MT29TZZZ8D5JKETS-107 W8Gb LPDDR3 Productionx 8×32 3.3V

MT29TZZZ8D5JKEZB-107 W 8Gb LPDDR3 Productionx 8×32 3.3V

MT29TZZZ8D6DKEZB-107 W 8Gb LPDDR3 Productionx 32×32 3.3V

MT29TZZZ8D6YKEAH-125 W 8Gb LPDDR3 Obsoletex 8×32 3.3V

  • 16Gb
Part No. (2)

MT29TZZZ5D6DKFRL-107 W 16Gb LPDDR3 Productionx 8×32 3.3V

MT29TZZZ5D6YKFAH-125 W16Gb LPDDR3 Obsoletex 8×32 1.8V

  • 24Gb
Part No. (4)

MT29PZZZ4C4WKETF-18 W4Gb LPDDR2 Obsoletex 16×8 1.8V

MT29PZZZ4D4BKESK-18 W4Gb LPDDR2 Productionx 32×8 3.3V

MT29PZZZ4D4WKETF-18 W4Gb LPDDR2 Obsoletex 32×8 1.8V

MT29TZZZ4D4BKERL-125 W4Gb LPDDR3 Contact Factoryx 8×32 3.3V

  • 32Gb
Part No. (2)

MT29TZZZAD8DKKBT-107 W32Gb LPDDR3 Productionx 8×32 3.3V

MT29VZZZAD8DQKSM-053 W32Gb LPDDR4 Productionx 8×16 3.3V

  • 48Gb
Part No. (8)

MT29PZZZ8D4BKFSK-18 W8Gb LPDDR2 Obsoletex 32×8 3.3V

MT29PZZZ8D5BKFTF-18 W 8GbLPDDR2 Obsoletex 32×32 3.3V

MT29TZZZ8D4BKFRL-125 W8Gb LPDDR3 Obsoletex 32×8 3.3V

MT29TZZZ8D5BKFAH-125 W8Gb LPDDR3 Obsoletex 32×8 3.3V

MT29TZZZ8D5JKETS-107 W8Gb LPDDR3 Productionx 8×32 3.3V

MT29TZZZ8D5JKEZB-107 W8Gb LPDDR3 Productionx 8×32 3.3V

MT29TZZZ8D6DKEZB-107 W8Gb LPDDR3 Productionx 32×32 3.3V

MT29TZZZ8D6YKEAH-125 W8Gb LPDDR3 Obsoletex 8×32 3.3V

———————————————

SDRAM

  • 三星SDRAM
Front and back view of Samsung DDR4.

DDR4LEARN MORE

Front and back view of Samsung DDR3

DDR3LEARN MORE

Front and back view of HBM Aquabolt

HBM AquaboltLEARN MORE

Front and back view of HBM Flarebolt

HBM FlareboltLEARN MORE

Front and back view of Samsung GDDR6

GDDR6LEARN MORE

Front and back view of Samsung GDDR5

GDDR5LEARN MORE

Front and back view of Samsung LPDDR4X

LPDDR4XLEARN MORE

Front and back view of Samsung LPDDR4

LPDDR4LEARN MORE

Front and back view of Samsung LPDDR3

LPDDR3LEARN MORE

Angled side view of module
  • SKHYNIX SDRAM

DDR4 SDRAM

Select a ProductDen.Org.VolSpeedPowerPKGProduct Status
COMPONENT4Gb8Gb16Gbx4x8x161.2VPB/RD/TF/UH/VKTF/UHTF/UH/VKUH/VK/WM/XNNormal PowerFBGAMass production

Related Document :

  • Excel Sheet
  • Part No. Decoder
  • Device Operation
  • Label Infomation
Part No.  Den. Org. Vol Speed Power PKG Product Status 
H5AN4G4NBJR 4Gbx41.2VTF/UHNormal PowerFBGAMass production
H5AN4G8NBJR 4Gbx81.2VTF/UHNormal PowerFBGAMass production
H5AN4G6NBJR 4Gbx161.2VTF/UHNormal PowerFBGAMass production
H5AN8G4NAFR 8Gbx41.2VTF/UH/VKNormal PowerFBGAMass production
H5AN8G4NCJR 8Gbx41.2VUH/VK/WM/XNNormal PowerFBGAMass production
H5AN8G8NAFR 8Gbx81.2VTF/UH/VKNormal PowerFBGAMass production
H5AN8G8NCJR 8Gbx81.2VUH/VK/WM/XNNormal PowerFBGAMass production
H5AN8G6NAFR 8Gbx161.2VTF/UH/VKNormal PowerFBGAMass production
H5AN8G6NCJR 8Gbx161.2VUH/VK/WM/XNNormal PowerFBGAMass production
H5ANAG8NCMR 16Gbx81.2VUH/VK/WM/XNNormal PowerFBGAMass production
H5ANAG6NAMR 16Gbx161.2VPB/RD/TF/UH/VKNormal PowerFBGAMass production
H5ANAG6NCMR 16Gbx161.2VUH/VK/WM/XNNormal PowerFBGAMass production
  • SPECTEK SDRAM

SpecTek DRAM Component Detail

DRAM Component Memory Types:

Memory Type: DDR SDRAM

DensityConfigPackagePin CountVoltageClock RateData RatePart Number
(Component Datasheets)
256MBIT32MX8FBGA60-BALL2.5V167 MHZDDR333SGG32M8T26ZV8FGF-6A
SGG32M8T26ZV8FGL-6A
32MX8TSOP-II66P2.5V167 MHZDDR333SGG32M8T26ZR8TLF-6A
SGG32M8T26ZR8TLL-6A
SGG32M8T26ZV8TLF-6A
SGG32M8T26ZV8TLL-6A
32MX8TSOP-II66P2.6V200MHZDDR400SGG32M8T26ZV8TLF-5B
SGG32M8T26ZV8TLL-5B
64MX4TSOP-II66P2.5V167 MHZDDR333SGG64M4T26ZV8TLF-6A
SGG64M4T26ZV8TLL-6A
512MBIT128MX4TSOP-II66P2.5V133 MHZDDR266SGG128M4T27BV8TLF-75A
SGG128M4T27BV8TLL-75A
128MX4TSOP-II66P2.5V167 MHZDDR333SGG128M4T27BV8TLF-6A
SGG128M4T27BV8TLL-6A
SGG128M4T27ZV8TLF-6A
SGG128M4T27ZV8TLL-6A
SGG32M8T36AV8GMF-5B
SGG32M8T36AV8TLF-5B
SMG32M8T36AV8GMF-5B
SMG32M8T36AV8GML-5B
SMG32M8T36AV8TLF-5B
SMG32M8T36AV8TLL-5B
32MX16TSOP-II66P2.5V167 MHZDDR333SGG32M16T27BV8TLF-6A
SGG32M16T27BV8TLL-6A
64MX8FBGA60-BALL2.6V200MHZDDR400SGG64M8T37ZV8FNF-5B
SGG64M8T37ZV8FNL-5B
64MX8TSOP-II66P2.5V167 MHZDDR333SGG64M8T27BV8TLF-6A
SGG64M8T27BV8TLL-6A
SGG64M8T27ZV8TLF-6A
SGG64M8T27ZV8TLL-6A
64MX8TSOP-II66P2.6V200MHZDDR400SGG64M8T37ZV8TLF-5B
SGG64M8T37ZV8TLL-5B
SMG64M8T37ZV8FNL-5B

NAND FLASH/SPI NOR FLASH

  • 东芝SLC NAND
类别容量
Raw SLC NAND 1Gb 2Gb 4Gb 8Gb16Gb32Gb*

*请点击任何一项以显示详细的产品信息并下载规格书。
*关于32Gb的信息,请联系销售代表。

  • 东芝SPI NAND

Serial Interface NAND

Features of Serial Interface NAND

Host can control the device by a low pin count

Supports Mode 0 and Mode 3 of Serial Peripheral Interface (SPI)Embedded ECC engine

Provides information of  ECC correction, ECC on Host controller is not required.The latest 24nm SLC NAND process technologyOffers wide line-up of capacity

For Serial Interface NAND, 1Gbit, 2Gbit and 4Gbit are available in a lineup.Available in small packages

6 x 8mm WSON, 10.3 x 7.5 SOP(*), 6 x 8 BGA(**)

* Please check the latest MP status with TMC sales representative regarding SOP package
** BGA package is under planning

Serial Interface NAND Block Diagram

 
* The ECC logic in Serial Interface NAND can be enabled and disabled by the customers.

Product Lineup

CategoryDensity
Serial Interface NAND1 Gb2 Gb4 Gb

*Please click on any item to show detailed product line up and to download datasheet


TONGCHIP 高性能工业级SPI NOR FLASH

  • 特性介绍:
  • TC25W**系列串口NOR FLASH为工业级产品
  • 高读写速度
  • 超宽工作电压:1.65V-3.7V
  • 页读取速度小于0.5ms
  • 读写次数10万次
  • 有限使用寿命达20年
  • 包装规范符合MSL3-MSL6
  • 封装材料复合GREEN标准

*目前量产产品为16Mbit,19年6月底推出8Mbit产品敬请期待


TONGCHIP 消费类SPI NOR TFLASH

  • 特性介绍:
  • TC25Q**系列串口NOR FLASH为消费级产品
  • 2 Line/4 Line两种规格
  • 标准工作电压:3.3V
  • 读写次数小于10万次
  • 有限使用寿命大于3年
  • 包装规范符合MSL1-3
  • 封装材料复合环保标准

*目前量产产品为2Mbit-128Mbit


*规格书请电邮索取:markte@tongchip.com